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1004 IP
901
0.0
64x8 Bits OTP (One-Time Programmable) IP, Ne-chi- 0.15μm 3.3V Logic Processes
The ATO00064X8NX150FPS3NA is organized as a 64x8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in Ne-chi- 0.15μm 3.3V ...
902
0.0
64x8 Bits OTP (One-Time Programmable) IP, SMI- 0.18μm MSGL-GE-1.8-3.3 & MSGL-LC-3.3-3.3
The ATO00064X8SM180N333NA is organized as a 64-bit by 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in SMIC 0.18μm ...
903
0.0
64x8 Bits OTP (One-Time Programmable) IP, TSM- 130nm BCD Plus Process
The ATO00064X8TS130BP53NA is organized as a 64-bit by 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSMC 0.13μm ...
904
0.0
256x1 Bits OTP (One-Time Programmable) IP, Abli- 130 nm 130nm BCD with 5V CMOS Core Process
The ATO00256X1AB130MXX3XX00A is organized as a 256-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in 0.13µm s...
905
0.0
256x1 Bits OTP (One-Time Programmable) IP, TSM- 0.18μm 1.8V/3.3V Mixed-Signal, General Purpose Process
The ATO00256X1TS180MSG3NA is organized as a 256 bit by 1 one-time programmable (OTP).This is a kind of non-volatile memory fabricated in TSM- 0.18μm 1...
906
0.0
256x1 Bits OTP (One-Time Programmable) IP, UM- 110 nm 1.2V/3.3V L110AE Process
The AT256X1U110MAE0AC is organized as a 256-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in UM- 110 nm 1.2V/...
907
0.0
256x1 Bits OTP (One-Time Programmable) IP, UM- 110 nm 1.2V/3.3V L110AE Process
The AT256X1U110MAE0AB is organized as 256 bits by 1 one-time programmable in 1-bit read and 1-bit program modes. This is a kind of non-volatile memory...
908
0.0
256x1 Bits OTP (One-Time Programmable) IP, VI- 110 nm 1.2V/5.0V BCD Process
The AT256X1V110BCD0AA is organized as 256 bits by 1 one-time programmable in 1-bit read and 1-bit program modes. This is a kind of non-volatile memory...
909
0.0
256x16 Bits OTP (One-Time Programmable) IP, 256x16 Bits One Time Programmable Device SMI- 110nm 1.2V/3.3V Mixed Signal Generic Process
The AT256X16Z110LL0AA is organized as 256 bits by 16 one-time programmable in 16-bit read and 1-bit program modes. This is a kind of non-volatile memo...
910
0.0
256x16 Bits OTP (One-Time Programmable) IP, TSM- 152nm 1.8V/3.3V GP MS Process
The AT256X16T152LP0AA is organized as 256 bits by 16 one-time programmable in 16-bit read and 1-bit program modes. This is a kind of non-volatile memo...
911
0.0
256X8 Bits OTP (One-Time Programmable) IP, SMI- 0.153μm MSGL-GE-1.8-3.3 Process
The ATO00256X1SM153MSG2NA is organized as a 256-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in SMIC 0.153u...
912
0.0
256x8 Bits OTP (One-Time Programmable) IP, TSM- 0.13um 1.5V/3.3V LP Process
The AT256X8T130LP0AA is organized as a 256-bit by 8 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in TSM- 0.13um 1.5V/...
913
0.0
256x8 Bits OTP (One-Time Programmable) IP, TSM- 40G 0.9/1.8V Process
The AT256X8T40G6AA is organized as 256 bits by 8 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in TSM- 40nm G standard...
914
0.0
4608x12 Bits OTP (One-Time Programmable) IP, TSM- 40ULP 0.9V/2.5V Process
The ATO4608X12TS040ULP7ZA is organized as 4608 x 12 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSM- 40nm ULP sta...
915
0.0
768 x 1 Bits One Time Programmable Device D- Hite- Mixed-Signal 110 nm 1.2V/3.3V Process
The ATO00768X1DB110SBM2NA is organized as 768 bits by 1 one-time programmable in 1-bit read and 1-bit program modes. This is a kind of non-volatile m...
916
0.0
768x1 Bits OTP (One-Time Programmable) IP, UM- 110 nm 1.2V/3.3V L110AE
The AT768X1U110MAE0AA is organized as 768 bits by 1 one-time programmable in 1-bit read and 1-bit program modes. This is a kind of non-volatile memor...
917
0.0
768x3 Bits OTP (One-Time Programmable) IP, UM- 142 nm 1.8V/3.3V CIS
The AT768X3U142CIS0AA is organized as 768-bits by 3 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in 0.142...
918
0.0
768x39 Bits OTP (One-Time Programmable) IP, TSM- 55ULP 0.9V–1.2V / 2.5V Process
The ATO0768X39TS055ULP4NL is organized as 768x39 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSM- 55nm LP 1.2V/2....
919
0.0
16x16 Bits OTP (One-Time Programmable) IP, SMI- 0.18μm BCDM 1.8V/5V process
The ATO0016X16SM180BS33NA is organized as 16 bits by 16 one-time programmable (OTP) in 16-bit read and 1-bit program modes. This is a kind of non-vola...
920
0.0
16x8 Bits OTP (One-Time Programmable) IP, TSM- CM018G 0.18μm 1.8V/3.3V Process
The ATO00016X8TS180CMG3NA is organized as 16 bits by 8 one-time programmable (OTP) in 8-bit read and 1-bit program modes. This is a kind of non-volati...
921
0.0
16x8 Bits OTP (One-Time Programmable) IP, VI- 150nm 1.8V BCD Process
The ATO00016X8VI150BG22NA is organized as 16 bits by 8 one-time programmable in 8-bit read and 1-bit program modes. This is a kind of non-volatile m...
922
0.0
16x8 Bits OTP (One-Time Programmable) IP, X-FA- 0.18um XH018 1.8V/3.3V process
The ATO00016X8XH18018P4DA is organized as a 16-bit by 8 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in 0.18µm XH018...
923
0.0
TCAM Compilers for Samsung (14nm, 10nm, SF5A, SF4X)
Synopsys embedded ternary content addressable memories (TCAMs) help networking designers meet the demand for wire-speed packet processing, access cont...
924
0.0
TCAM Compilers for SMIC (28nm)
Synopsys embedded ternary content addressable memories (TCAMs) help networking designers meet the demand for wire-speed packet processing, access cont...
925
0.0
TCAM Compilers for TSMC (65nm, 40nm, 28nm, 16nm, N7, N6, N5, N4
Synopsys embedded ternary content addressable memories (TCAMs) help networking designers meet the demand for wire-speed packet processing, access cont...
926
0.0
TCAM in SMIC 28HK+ upto 800Mbps
...
927
0.0
Register File with low power retention mode and 3 speed options
Low Leakage. Mobile Semiconductor's RF1P-ULL-GF22FDX-PLUS memory compiler generates single-port Register File instances using the GLOBALFOUNDRIES 22nm...
928
0.0
Register File with low power retention mode and 3 speed options
Low Leakage. Mobile Semiconductor's SP-ULD-GF22FDX-PLUS memory compiler generates single-port Register File instances using the GLOBALFOUNDRIES 22nm F...
929
0.0
Register File with low power retention mode, high speed pins on 1 side
Low Leakage. Mobile Semiconductor's Bulk 22 ULL Register file memory compiler generates single-port Register File instances using the Bulk 22ULL proce...
930
0.0
memBrain™ Tile
...
931
0.0
Metal programmable ROM compiler - Memory optimized for low power - compiler range up to 1024 k
Foundry Sponsored - Metal programmable ROM compiler - TSMC 90 nm LPeF - Non volatile memory optimized for low power - compiler range up to 1024 k...
932
0.0
Metal programmable ROM compiler - Memory optimized for low power - compiler range up to 256 k
Metal programmable ROM compiler - TSMC 65 nm LP - Non volatile memory optimized for low power - compiler range up to 256 k...
933
0.0
Metal programmable ROM compiler - Memory optimized for low power - compiler range up to 256 k
Foundry Sponsored - Metal programmable ROM compiler - TSMC 130 nm BCD - Non volatile memory optimized for low power - compiler range up to 256 k...
934
0.0
Metal programmable ROM compiler - Memory optimized for low power - Dual Voltage - compiler range up to 1024 k
Metal programmable ROM compiler - TSMC 130 nm G - Non volatile memory optimized for low power - Dual Voltage - compiler range up to 1024 k...
935
0.0
Metal programmable ROM compiler - Non volitile memory optimized for low power - compiler range up to 256 k
Metal programmable ROM compiler - TSMC 130 nm BCD Plus - Non volatile memory optimized for low power - compiler range up to 256 k...
936
0.0
Single port SRAM Compiler - low power retention mode and column repair
Single Port SRAM Compiler with Low Power Retention Mode and Ultra Low Leakage...
937
0.0
Single Port SRAM compiler - Memory optimized for high density and low power - compiler range up to 320 k
Single Port SRAM compiler - Memory optimized for high density and low power - compiler range up to 320 k...
938
0.0
Single Port SRAM compiler - Memory optimized for high density and low power - Deep N Well supported - compiler range up to 320 k
Single Port SRAM compiler - TSMC 55 nm LP - Memory optimized for high density and low power - Deep N Well supported - compiler range up to 320 k...
939
0.0
Single Port SRAM compiler - Memory optimized for high density and low power - Dual Voltage - compiler range up to 320 k
Foundry sponsored - Single Port SRAM compiler - TSMC 55 uLPeFlash - Memory optimized for high density and low power - Dual Voltage - compiler range up...
940
0.0
Single Port SRAM compiler - Memory optimized for high density and low power - Dual voltage - compiler range up to 640 k
Single Port SRAM compiler - TSMC 90 nm LPeF - Memory optimized for high density and Low power - Dual voltage - compiler range up to 640 k...
941
0.0
Single Port SRAM compiler - Memory optimized for ultra high density and high speed - compiler range up to 320 k
Single Port SRAM compiler - TSMC 65 nm LP - Memory optimized for ultra high density and high speed - compiler range up to 320 k...
942
0.0
Single Port SRAM compiler - Memory optimized for ultra high density and low power - 3ML- compiler range up to 320 k
Foundry sponsored - Single Port SRAM compiler - TSMC 55 nm HV - Memory optimized for ultra high density and low power - 3ML- compiler range up to 320 ...
943
0.0
Single Port SRAM compiler - Memory optimized for ultra low power and high density - Dual Voltage - compiler range up to 512 k
Foundry Sponsored - Single Port SRAM compiler - TSMC 180 nm eLL - Memory optimized for ultra low power and high density - Dual Voltage - compiler rang...
944
0.0
Single Port SRAM with low power retention mode, high speed pins on 1 side
Low Leakage. Mobile Semiconductor's Bulk 22 ULL SRAM memory compiler generates memory instances using the Bulk 22ULL process. Each ultra-low leakage m...
945
0.0
Single Port, High Speed, Multi Bank SRAM Memory Compiler
Low Leakage. Mobile Semiconductor's SP-HSB-GF22FDX-PLUS memory compiler generates high speed memories by splitting memory into 1 to 4 banks for reduc...
946
0.0
1Kbyte EEPROM (NTLab)
The block is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1Kbyte (16(bit per word) x 8(words per page) x 64(...
947
0.0
2KByte EEPROM in SMIC 130EF
...
948
0.0
1Kbyte EEPROM with configuration 64p8w16bit
180SMIC_EEPROM_08 is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1 Kbyte (16(bit per word) x 8(words per p...
949
0.0
8Kx16 Bits OTP (One-Time Programmable) IP, D- HiTe- AN180 1.8V / 5V Process
The ATO008KX16DB180AO15NA is organized as 8Kx16 One-Time Programmable in 16-bit read and 1-bit program modes. This is a kind of non-volatile memory su...
950
0.0
8Kx16 Bits OTP (One-Time Programmable) IP, VI- 110nm E-Flash 1.5V/3.3V Process
The ATO008KX16VI110EFM5DA I-fuse® IP is organized as 8Kx16 bits one-time programmable (OTP). This is a kind of non-volatile memory fabricated in VI- 1...